Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2008-01-22
2010-12-28
Purvis, Sue (Department: 2826)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S787000, C257SE21090
Reexamination Certificate
active
07858531
ABSTRACT:
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising at least one transistor element. An etch stop layer is formed over the transistor element. A stressed first dielectric layer is formed over the etch stop layer. A protective layer adapted to reduce an intrusion of moisture into the first dielectric layer is formed over the first dielectric layer. At least one electrical connection to the transistor element is formed. At least a portion of the protective layer remains over the first dielectric layer after completion of the formation of the at least one electrical connection.
REFERENCES:
patent: 5674781 (1997-10-01), Huang et al.
patent: 6475925 (2002-11-01), Braeckelmann et al.
patent: 2006/0091471 (2006-05-01), Frohberg et al.
patent: 2006/0223255 (2006-10-01), Chen et al.
patent: 2006/0292774 (2006-12-01), Chen et al.
Machida et al. “Improvement of Water-Related Hot-Carrier Reliability by Using ECR Plasma-SiO2.” IEEE Transactions on Electron Devices, 1994; 41(5): 709-714.
Finken Michael
Hohage Joerg
Richter Ralf
Schlott Jana
Advanced Micro Devices , Inc.
Kuo W. Wendy
Purvis Sue
Williams Morgan & Amerson P.C.
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