Method of forming a semiconductor memory device

Details Method of forming a semiconductor memory device Method of forming a semiconductor memory device

2011-06-14

2011-06-14

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S683000, C438S684000, C257SE21006, C257SE21170, C257SE21016, C257SE21077, C257SE21645, C257SE21324, C257SE21422

Reexamination Certificate

active

07960231

ABSTRACT:
A method of forming a semiconductor memory device includes forming a tunnel insulating layer on a semiconductor substrate, and forming a silicon layer, including metal material, on the tunnel insulating layer. Accordingly, an increase in the strain energy of the conductive layer may be prohibited and, therefore, the growth of grains constituting the conductive layer may be prevented. Furthermore, a threshold voltage distribution characteristic and electrical properties of a semiconductor memory device may be improved.

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