Method of forming a semiconductor layer

Details Method of forming a semiconductor layer Method of forming a semiconductor layer

2011-07-05

2011-07-05

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21461

Reexamination Certificate

active

07972922

ABSTRACT:
A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.

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PCT Application No. PCT/US2009/063121 International Search Report and Written Opinion, published May 27, 2010.

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