Method of forming a semiconductor device with thermally...

Details Method of forming a semiconductor device with thermally... Method of forming a semiconductor device with thermally...

2005-08-09

2005-08-09

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S619000

Reexamination Certificate

active

06927158

ABSTRACT:
A method of forming a semiconductor device to have a gap between wirings formed on a substrate, which gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at zero degrees Celsius. In the method, the following steps are performed: (A) forming a wiring and a filling layer filled between wirings, on a substrate; (B) forming a gas permeable film on the wiring and the filling layer; (C) removing the filling layer through the gas permeable film so as to form a gap between the wirings; (D) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0.degree. C. through the gas permeable film into the gap; and (E) forming a gas impermeable film on the gas permeable film.

REFERENCES:
patent: 6255712 (2001-07-01), Clevenger et al.
patent: 6472333 (2002-10-01), Xia et al.
patent: 6524429 (2003-02-01), Nogami et al.

Affiliated with

Also associated with

Rating

Method of forming a semiconductor device with thermally... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a semiconductor device with thermally..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor device with thermally... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3444548