Method of forming a semiconductor device having narrow gate elec

Details Method of forming a semiconductor device having narrow gate elec Method of forming a semiconductor device having narrow gate elec

1998-04-29

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438263, H01L 21336

Patent

active

060966157

ABSTRACT:
A semiconductor device having a narrow gate electrode and a process of fabricating such a device is disclosed. The semiconductor device is formed by forming a polysilicon block over a substrate and forming a nitride spacer adjacent at least one sidewall of the polysilicon block. A portion of the polysilicon block opposite the nitride spacer is selectively removed. The polysilicon block is then oxidized to form an oxide portion adjacent one side of the polysilicon block and to form a narrow polysilicon block, wherein the nitride spacer inhibits oxidation of another side of the polysilicon block. The narrow polysilicon block is used as a gate electrode.

REFERENCES:
patent: 5286664 (1994-02-01), Horiuchi
patent: 5384272 (1995-01-01), Ibok et al.
patent: 5672531 (1997-09-01), Gardner et al.
patent: 5759897 (1998-06-01), Kadosh et al.

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