Method of forming a semiconductor device having high and low res

Details Method of forming a semiconductor device having high and low res Method of forming a semiconductor device having high and low res

1997-05-05

1998-04-14

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438385, 438527, 438529, 438532, 438914, H01L 218234

Patent

active

057390592

ABSTRACT:
The present invention is a method of manufacturing a high/low resistance on a mix-mode product. The method includes forming a polysilicon layer over a wafer. A blanket ion implantation is performed to implant ions into the entire polysilicon layer. The polysilicon layer is then separated into a high resistance area and a low resistance area. The low resistance area top surface is raised higher than the high resistance area. A photoresist is then formed on the polysilicon areas. The photoresist is subsequently etched back to the top surface of the low resistance areas. A second implant is done on the low resistance area.

REFERENCES:
patent: 4592128 (1986-06-01), Bourassa
patent: 4859278 (1989-08-01), Choi
patent: 5246876 (1993-09-01), Manning
patent: 5514617 (1996-05-01), Liu
patent: 5620922 (1997-04-01), Yoshida et al.

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