Method of forming a semiconductor device having a removable...

Details Method of forming a semiconductor device having a removable... Method of forming a semiconductor device having a removable...

2007-02-06

2010-06-01

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C257SE21435

Reexamination Certificate

active

07727829

ABSTRACT:
A semiconductor device is formed using a semiconductor substrate. A gate dielectric is formed over the semiconductor substrate. A gate electrode layer is formed over the gate dielectric. A patterned masking layer is formed over the gate electrode layer. A first region of the gate electrode layer lies within an opening in the patterned masking layer. The first region of the gate electrode layer is partially etched to leave an elevated portion of the gate electrode layer and a lower portion adjacent to the elevated portion. A sidewall spacer is formed adjacent to the elevated portion and over the lower portion. An implant is performed into the semiconductor substrate using the elevated portion and the sidewall spacer as a mask. The sidewall spacer and the lower portion are removed.

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patent: 6743686 (2004-06-01), Lee et al.
patent: 6797602 (2004-09-01), Kluth et al.
patent: 6972255 (2005-12-01), Reber et al.

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