Method of forming a semiconductor device having a barrier layer

Details Method of forming a semiconductor device having a barrier layer Method of forming a semiconductor device having a barrier layer

1999-11-15

2000-11-14

Hardy, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438172, 438174, 438176, 257194, H01L 21338

Patent

active

061469319

ABSTRACT:
A semiconductor device includes an ohmic electrode and a Schottky electrode respectively carrying interconnection patterns with intervening adhesion layer and a diffusion barrier layer, wherein the Schottky electrode further includes a metal layer that prevents a reaction between the Schottky electrode and the diffusion barrier layer such that the metal layer is interposed between the top surface of the Schottky electrode and adhesion layer for increasing the distance between the diffusion barrier layer and the Schottky electrode.

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