Method of forming a semiconductor device have a screen stacked c

Details Method of forming a semiconductor device have a screen stacked c Method of forming a semiconductor device have a screen stacked c

1996-08-27

1999-08-03

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

059337265

ABSTRACT:
A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.

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patent: 5471418 (1995-11-01), Tanigawa
patent: 5621606 (1997-04-01), Hwang
patent: 5712182 (1998-01-01), Madan

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