Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-05
2006-12-05
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S239000, C438S240000, C438S591000, C257SE21177
Reexamination Certificate
active
07144784
ABSTRACT:
In one embodiment, a method for forming a semiconductor device is described. A semiconductor substrate has a first portion and a second portion. A first dielectric layer formed over the first portion of the semiconductor substrate and a second dielectric layer is formed over the second portion of the semiconductor substrate. A cap that may include silicon, such as polysilicon, is formed over the first dielectric layer. A first electrode layer is formed over the cap and a second electrode layer is formed over the second dielectric.
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Cave Nigel G.
Goktepeli Sinan
Kolagunta Venkat R.
Min Byoung W.
Zia Omar
Ahmadi Mohsen
Freescale Semiconductor Inc.
Lebentritt Michael
Vo Kim-Marie
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