Method of forming a semiconductor device and semiconductor...

Details Method of forming a semiconductor device and semiconductor... Method of forming a semiconductor device and semiconductor...

2006-04-11

2011-12-13

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S303000, C438S305000, C438S307000, C257SE21431

Reexamination Certificate

active

08076189

ABSTRACT:
A method of forming a semiconductor device comprises forming a control electrode over a portion of a semiconductor layer, forming recesses extending into the semiconductor layer on opposing sides of the control electrode, and forming doped regions in the semiconductor layer through the recesses. The doped regions form current electrode regions of the semiconductor device and each doped region extends into the semiconductor layer from at least a base of a recess. The method further comprises forming, after forming the doped regions, strained semiconductor regions in the recesses, wherein a junction between each doped region and the semiconductor layer is formed below an interface between a strained semiconductor region and the semiconductor layer.

REFERENCES:
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 6372583 (2002-04-01), Tyagi
patent: 6861318 (2005-03-01), Murthy et al.
patent: 6885084 (2005-04-01), Murthy et al.
patent: 2003/0080361 (2003-05-01), Murthy et al.
patent: 2003/0132487 (2003-07-01), Cabral et al.
patent: 2005/0012146 (2005-01-01), Murthy et al.
patent: 2005/0082522 (2005-04-01), Huang et al.
patent: 2005/0090082 (2005-04-01), Sridhar et al.
patent: 2005/0110082 (2005-05-01), Cheng et al.
patent: 2005/0280098 (2005-12-01), Shin et al.
patent: 2005/0285203 (2005-12-01), Fukutome et al.
patent: 2006/0035449 (2006-02-01), Yoo
patent: 2006/0065937 (2006-03-01), Hoffmann et al.
patent: 2006/0172511 (2006-08-01), Kammler et al.
patent: 2006/0202234 (2006-09-01), Hara
patent: 2006060222 (2006-03-01), None
patent: 0169668 (2001-09-01), None

Affiliated with

Also associated with

Rating

Method of forming a semiconductor device and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a semiconductor device and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor device and semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4260320