Method of forming a semiconductor device and semiconductor...

Details Method of forming a semiconductor device and semiconductor... Method of forming a semiconductor device and semiconductor...

2008-10-02

2010-11-02

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S217000, C438S376000, C438S377000, C257SE29279, C257SE29268

Reexamination Certificate

active

07824973

ABSTRACT:
According to one embodiment of the present invention, a method of forming a semiconductor device is provided, the method including: forming a substrate; forming a first gate on the substrate; forming a mask layer on the substrate, the mask layer including a first window covering an area within which the first gate is formed so that the first gate divides the substrate exposed by the first window into a first region and a second region; and doping the exposed substrate using rays inclined with respect to the substrate top surface, where the position of the first gate with respect to a border of the first window is chosen such that the inclined doping rays impinge more on the first region than on the second region.

REFERENCES:
patent: 7045405 (2006-05-01), Tran
patent: 2004/0014303 (2004-01-01), Layman et al.
patent: 2006/0071183 (2006-04-01), Shibata et al.

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