Method of forming a self-aligned contact structure using a...

Details Method of forming a self-aligned contact structure using a... Method of forming a self-aligned contact structure using a...

2007-04-17

2007-04-17

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S748000

Reexamination Certificate

active

10846810

ABSTRACT:
Disclosed is a method of forming a self-aligned contact structure using a sacrificial mask layer. The method includes forming a plurality of parallel interconnection patterns on a semiconductor substrate. Each of the interconnection patterns has an interconnection and a mask pattern, which are sequentially stacked. Interlayer insulating layer patterns are formed to fill gap regions between the interconnection patterns. The mask patterns are partially etched to form recessed mask patterns that define grooves between the interlayer insulating layer patterns. Then, sacrificial mask patterns filling the grooves are formed. A predetermined region of the interlayer insulating layer patterns is etched using the sacrificial mask patterns as etching masks to form a self-aligned contact hole that exposes a predetermined region of the semiconductor substrate. A spacer is formed of a sidewall of the self-aligned contact hole, and a plug surrounded by the spacer is formed in the self-aligned contact hole.

REFERENCES:
patent: 6130450 (2000-10-01), Kohyama et al.
patent: 6534813 (2003-03-01), Park et al.
patent: 6913987 (2005-07-01), Haufe et al.
patent: 10256936 (2004-09-01), None

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