Method of forming a seam-free tungsten plug

Details Method of forming a seam-free tungsten plug Method of forming a seam-free tungsten plug

2009-07-16

2011-10-11

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S635000, C257SE21583

Reexamination Certificate

active

08034705

ABSTRACT:
A plug comprises a first insulating interlayer, a tungsten pattern and a tungsten oxide pattern. The first insulating interlayer has a contact hole formed therethrough on a substrate. The tungsten pattern is formed in the contact hole. The tungsten pattern has a top surface lower than an upper face of the first insulating interlayer. The tungsten oxide pattern is formed in the contact hole and on the tungsten pattern. The tungsten oxide pattern has a level face.

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