Method of forming a ring shaped storage node structure for a DRA

Details Method of forming a ring shaped storage node structure for a DRA Method of forming a ring shaped storage node structure for a DRA

1999-10-22

2000-05-09

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

060603534

ABSTRACT:
A process for forming a cylindrical shaped, storage node structure, for a DRAM capacitor, has been developed. The process features forming a capacitor opening, in an insulator layer, exposing the fop surface of a storage node plug structure, located at the periphery of the capacitor opening. The deposition of a conductive layer, followed by a blanket, anisotropic RIE procedure, results in the creation of a cylindrical shaped, storage node structure, on the sides of the capacitor opening, with contact to the underlying storage node plug structure, accomplished via a segment of the cylindrical shaped, storage node structure, overlying a portion of the top surface of the underlying storage node plug structure. The cylindrical shaped, storage node structure described on this invention, is formed without the use of the costly CMP procedure, and without the use of the costly and complex, photoresist plug, used to protect the bottom portion of a storage node structure, employed for the fabrication of counterpart, crown shaped storage node structures.

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