Method of forming a retrograde photoresist profile

Details Method of forming a retrograde photoresist profile Method of forming a retrograde photoresist profile

1991-09-03

1993-06-22

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430326, 430327, 430329, 430330, G03C 500

Patent

active

052215962

ABSTRACT:
A retrograde profile is formed in a photoresist layer (11, 20) by modifying the rate at which a photoresist developer solution dissolves a portion (12) of a photoresist layer (11, 20). The photoresist layer (11, 20) is exposed to a chemical such as hexamethyldisilizane or dimethylsulfoxane to allow a portion (12) of the photoresist (11, 20) to absorb the chemical. The photoresist (11, 20) is then heated in order to enhance a reaction between the photoresist (11, 20) and the chemical. The reaction modifies a portion (12) of the photoresist (11, 20) to reduce the rate at which the portion (12) of the photoresist (11, 20) is dissolved by a developer solution.

REFERENCES:
patent: 4212935 (1980-07-01), Canavello
patent: 4536421 (1985-08-01), Matsuzawa
patent: 5024896 (1991-06-01), Mathad

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