Method of forming a resist pattern by using an anti-reflective l

Details Method of forming a resist pattern by using an anti-reflective l Method of forming a resist pattern by using an anti-reflective l

1994-10-11

1995-12-05

Schilling, Richard L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430159, 430166, 430326, 430510, 430512, 430523, 430524, 430525, 430526, 430272, 430950, G03C 1825

Patent

active

054728290

ABSTRACT:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, a method of forming the anti-reflective layer therewith and a method of forming a resist pattern using a novel anti-reflective layer obtained therewith. The optimum condition of the anti-reflective layer is determined and the anti-reflective layer is formed by the methods described below. Further, an optimal anti-reflective layer is obtained by the method which is used for forming the resist pattern. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

REFERENCES:
patent: 4407927 (1983-10-01), Komoshida et al.
patent: 5077185 (1991-12-01), Cho et al.

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