Method of forming a recessed buried-diffusion device

Details Method of forming a recessed buried-diffusion device Method of forming a recessed buried-diffusion device

2007-08-14

2007-08-14

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S303000

Reexamination Certificate

active

11248786

ABSTRACT:
A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.

REFERENCES:
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 6025235 (2000-02-01), Krivokapic
patent: 6169003 (2001-01-01), Hu et al.
patent: 6455383 (2002-09-01), Wu
patent: 6468915 (2002-10-01), Liu
patent: 6498067 (2002-12-01), Perng et al.
patent: 6563176 (2003-05-01), Gauthier, Jr. et al.
patent: 2002/0055212 (2002-05-01), Choi et al.
patent: 2003/0030114 (2003-02-01), Kuwazawa
patent: 2004/0219724 (2004-11-01), Park et al.
patent: 2005/0035408 (2005-02-01), Wang et al.
patent: 2006/0286757 (2006-12-01), Power et al.

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