Method of forming a positive resist pattern in photoresist of o-

Details Method of forming a positive resist pattern in photoresist of o- Method of forming a positive resist pattern in photoresist of o-

1988-02-17

1989-01-10

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430191, 430192, 430194, 430196, 430197, 430325, 430330, 430166, 430167, 430 5, 430311, G03F 726

Patent

active

047973480

ABSTRACT:
A dually photosensitive composition useful as a photoresist in the manufacture of ICs and the like electronic devices, which is positively photosensitive by exposure to ultraviolet in a relatively small dose but negatively photosensitive by exposure to ultraviolet in a substantially larger dose than above or by exposure to far ultraviolet light, is obtained by admixing a positive-type photoresist material comprising a novolac resin and an o-naphthoquinone diazide compound with a bisazide compound such as 4,4'-diazidodiphenyl sulfide. The inventive photosensitive composition provides a possibility of developing an ingenious technique for patterning of a photoresist layer on the substrate such as a checkboard-like patterned layer by use of a photomask of a line-and-space pattern.

REFERENCES:
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patent: 4164421 (1979-08-01), Shinozaki et al.
patent: 4259430 (1981-03-01), Kaplan et al.
patent: 4326020 (1982-04-01), Golda et al.
patent: 4377633 (1983-03-01), Abrahamovich et al.
patent: 4411978 (1983-10-01), Laridon et al.
patent: 4469778 (1984-09-01), Iwayanagi et al.

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