Method of forming a positive photoresist pattern utilizing contr

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430156, 430158, 430163, 430302, 430312, 430329, G03F 730, G03F 7021

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052906663

ABSTRACT:
The present invention relates to a method of forming a pattern using a photosensitive film having bleaching properties for use as a contrast enhancing layer. The photosensitive film comprises an aromatic diazonium salt having extremely high purity content. In addition, no harmful metals are incorporated during preparation. Fine patterns of various semiconductor devices can thus be formed with high accuracy. The diazonium salt is selected from the group consisting of trifluromethanesulfonic acid salt, methanesulfonic acid salts, and trifluromethaneacetic salts of aromatic diazonium compounds.

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English translation of pertinent portions of Semicon News 1988.8, pp. 92-98.
West, P. R. et al., "Contrast Enhanced Photolithograpy: Application of Photobleaching Processes in Microlithography", J. of Imaging Science, vol. 30, No. 2, Mar./Apr., 1986, pp. 65-68.
M. Hashimoto et al, "I-line resist for half-micron lithography" pp. 88-95, Technical Proceedings, Semicon/Japan, 1989, Nov. 13-15, Tokyo, by Semiconductor Equipment and Materials International.

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