Method of forming a porous material layer in a semiconductor...

Details Method of forming a porous material layer in a semiconductor... Method of forming a porous material layer in a semiconductor...

2005-11-08

2005-11-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S423000, C438S477000, C438S530000, C438S778000, C438S783000, C438S960000, C257SE21275

Reexamination Certificate

active

06962855

ABSTRACT:
A material layer containing impurities that react with water molecules is formed on a substrate. The material layer is then heated under a pressure exceeding one atmosphere and in the presence of water vapor to generate pores in the material layer. The material layer may form the interlayer insulating layer of a semiconductor device.

REFERENCES:
patent: 5626679 (1997-05-01), Shimizu et al.
patent: 6451712 (2002-09-01), Dalton et al.
patent: 6541367 (2003-04-01), Mandal
patent: 58006138 (1983-01-01), None
patent: 62018040 (1987-01-01), None
Mayumi et al., PSG Glow in High-Pressure Steam, Japanesee Journal of Applied Physics, vol. 29, No. 4, Apr. 1990, pp645-649.

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