Method of forming a polysilicon resistor using an oxide, nitride

Details Method of forming a polysilicon resistor using an oxide, nitride Method of forming a polysilicon resistor using an oxide, nitride

1995-06-07

1997-08-12

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438384, 438385, 438647, 438532, H01L 2170

Patent

active

056565240

ABSTRACT:
A polysilicon resistor (40) includes a field oxide layer (12) and a polysilicon layer (20) that covers a portion of field oxide layer (12). The polysilicon layer (20) possesses a predetermined electrical resistance value. Nitride/oxide stack (42) covers a predetermined portion of the polysilicon layer (20) and forms at least one exposed location of polysilicon layer (20) on which not to implant a dopant to achieve a predetermined resistance value. Silicide layer (34) covers exposed location.

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