Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-12
2011-04-12
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21409, C257SE21413
Reexamination Certificate
active
07923316
ABSTRACT:
In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.
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Cho Se-young
Kim Do-Young
Kwon Jang-yeon
Noguchi Takashi
Park Kyung-bae
Garber Charles D
Harness & Dickey & Pierce P.L.C.
Isaac Stanetta D
Samsung Electronics Co,. Ltd.
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