Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Reexamination Certificate
2001-10-26
2003-12-02
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
C430S035000, C430S942000, C250S310000, C250S3960ML, C250S492100
Reexamination Certificate
active
06656662
ABSTRACT:
CROSS-REFERENCE TO RELATED APPLICATION
This application is a national phase application of, and claims benefit of, PCT application no. PCT/JP00/05800, filed in the Japanese Patent Office on Aug. 28, 2000.
TECHNICAL FIELD OF THE INVENTION
This invention relates to a method of forming a polymer chain having a desired length and a predetermined position in a thin film comprising monomers comprising multiple bonds.
PRIOR ART
Due to the advances made in ultra fine processing of silicone semiconductors by lithography, the performance of electronic calculators continues to advance. However, at the size of the metal-metal oxide-semiconductor (MOS) transistors currently in use, there are theoretical limitations on the ultra fine processing which is possible. This is due to the fact that, as the size becomes smaller, the physical properties of the material can no longer be maintained and quantum dynamic effects begin to appear. It is thought that when the size of a transistor becomes smaller than approximately 0.1 &mgr;m (100 nm)) it will no longer function (Keyes, R. W., Phys. Today 45, 42-48 (1993)).
Therefore, in order that electronic calculators can continue to advance in the 21st century, new devices must be developed based on new principles, and quantum effect devices using quantum dynamics or molecular devices using organic molecules have been proposed (e.g., Goldhaber-Gordon, D., Montemerlo, M. S., Love, J. C., Opiteck, G. J. & Ellenbogen, and Proc. IEEE 85,521-540 (1997)).
These are devices of the order of nanometers, smaller than the present MOx transistors by about two orders of magnitude, and nanosize patterning techniques are therefore required to produce them. One type of nanosize patterning technique wherein individual atoms are removed or attached and moved using a scanning tunnel microscope (STM) probe, has been actively studied in the past ten years or so. There are many such reports in the literature, for example a report where xenon atoms were displaced to draw the characters IBM (Eigler, D. M. & Schweizer, and E. K. Nature 344, 524-526 (1990)) or an example where hydrogen was removed from a silicone surface terminated by hydrogen (Shen, T.-C. et al., Science 268, 1590 (1995)).
In multilayer films or liquids comprising monomer organic molecules., there are several reports where polymers have been locally produced by applying a voltage pulse to an STM probe (Heckl, W. M. & Smith, D. P. E., J.Vac.Sci.Technol. B9, and 1159-1161 (1991), Yang, R., Evans, D. F. & Hendrickson, W. A., and Langmuir 11, 211-213 (1995), and Ma, L. P., Yang, W. J., Xie, S. S. & Pang, S. J., Appl.Phys.Lett. 73, 3303-3305 (1998). These reports indicate that polymerization reactions can be induced by the STM probe, but as they are only local reactions, the techniques could not be used to draw nanostructures instantaneously over a wide region of the surface.
Problems to be Solved by the Invention
The aforesaid prior art techniques produce nanosize structures by controlling atoms one by one, and are therefore considered very useful to manufacture a new device and verify its functions. However, as the atoms must be moved one by one, the forming rate is slow and it is difficult to manufacture plural devices over a wide range which is required for commercialization. Further, one of the reasons why it is difficult to implement quantum effect devices or molecular devices is that there are no useful techniques for forming interconnections between individual devices or between devices and external electrodes.
This invention therefore aims to provide a method of resolving the above problems inherent in the prior art by providing a method for forming nanostructures at high speed, and by providing a nanoscale interconnection technique.
Means to Solve the Problem
This invention induces a chain polymerization reaction by applying a stimulation by means of a pulse voltage to an organic molecule thin film comprising a monomer having multiple bonds arranged in rows, allowing a structure as long as one molecule to be produced at a desired position by only one operation with an electrode (for example, an STM probe), and allowing a polymer chain having a predetermined length to be produced in the thin film, e.g., by forming defects in the thin film.
This invention is a method for producing a polymer chain by polymerizing a monomer by applying a pulse voltage to a thin film comprising the monomer having multiple bonds which have been aligned in rows so that unsaturated bonds are adjacent to one another. The polymer chain can be polymerized to a predetermined length at the predetermined position. Further, the length of the monomer can be controlled using a defect formed on the thin film as an end point of the polymer molecule chain.
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Nanostructure Patterning C.R.K.Marrian and Co.W.; Proc IEEE, v79, #8 (1991), pp. 1149-1158.*
Shen et al., Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms, Science, vol. 268, Jun. 16, 1995, p. 1542, 1590-1592.
Eigler et al., Positioning Single Atoms with a Scanning Tunnelling Microscope, Nature, vol. 344, Issue No. 6266, Apr. 5, 1990, p. 524-526.
Heckl et al., Electropolymerization of Glutaraldehyde Observed by . . . , Journal of Vacuum Science & Technology B, Second Series, vol. 9, No. 2, Part 1, Mar./Apr. 1991, p. 1159-1161.
Ma et al., Ultrahigh Density Data Storage from Local Polymerization . . . , Applied Physics letters, vol. 73, No. 22, Nov. 30, 1998, p. 3303-3305.
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Yang et al., Writing and Reading at Nanoscale with a Scanning Tunnelling Microscope, American Chemical Society, vol. 11, No. 1, Aug. 5, 1994, p. 211-213.
Gordon et al., Overview of Nanoelectronic Devices, Proceedings of the IEEE, vol. 85, No. 4, Apr. 1997, p. 521-540.
Aono Masakazu
Okawa Yuji
Cohn PLLC Gary C
Huff Mark F.
Japan Science and Technology Corporation
Sagar K
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