Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Post imaging treatment with particles
Reexamination Certificate
2007-11-20
2007-11-20
Chu, John S. (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Post imaging treatment with particles
C430S311000, C430S313000, C430S317000, C430S270100, C430S907000
Reexamination Certificate
active
10375102
ABSTRACT:
An organic anti-reflective coating (ARC) is formed over a surface of a semiconductor substrate, and a resist layer including a photosensitive polymer is formed on the ARC. The photoresistive polymer contains a hydroxy group. The resist layer is then subjected to exposure and development to form a resist pattern. The resist pattern to then silylated to a given depth by exposing a surface of the resist pattern to a vapor phase organic silane mixture of a first organic silane compound having a functional group capable of reacting with the hydroxy group of the photoresistive polymer, and a second organic silane compound having two functional groups capable of reacting with the hydroxy group of the photoresistive polymer Then, the silylated resist pattern is thermally treated, and the organic ARC is an isotropically etched using the thermally treated resist pattern as an etching mask.
REFERENCES:
patent: 4751170 (1988-06-01), Mimura et al.
patent: 5234793 (1993-08-01), Sebald et al.
patent: 5286607 (1994-02-01), Brown
patent: 5707783 (1998-01-01), Stauffer et al.
patent: 6210856 (2001-04-01), Lin et al.
patent: 6432608 (2002-08-01), Fujie et al.
patent: 6451512 (2002-09-01), Rangarajan et al.
patent: 6-20943 (1994-01-01), None
patent: 1998-0481 48 (1998-09-01), None
Sung-Ho Lee et al., “Novel Surface silylation Process for Chemically Amplified Photoresist.” SPIE's 27th Annual International Symposium and Education Program on Microlithography. Mar. 3-8, 2002. Santa Clara. California.
Chae Yun-sook
Kim Ji-soo
Lee Sung-ho
Woo Sang-gyun
Chu John S.
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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