Method of forming a photoresist pattern

Details Method of forming a photoresist pattern Method of forming a photoresist pattern

1987-12-03

1989-01-31

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430190, 430191, 430330, 430331, G03F 726

Patent

active

048015180

ABSTRACT:
A method of forming a photoresist pattern wherein a photoresist coating film of naphthoquinone diazide sulfonate of novolak is formed on a substrate layer, the photoresist coating film is exposed by selectively irradiating with near ultraviolet radiation of 350 to 450 nm through a photomask, and the exposed photoresist coating film is developed with an either a negative type or positive type developing solution. The resultant photoresist pattern is usable for manufacturing a highly integrated circuit such as LSI which requires fine processing techniques.

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