Method of forming a phase change layer and method of...

Details Method of forming a phase change layer and method of... Method of forming a phase change layer and method of...

2011-03-08

2011-03-08

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S095000, C257SE21462, C257SE21201, C257SE21666, C427S255350, C427S255190

Reexamination Certificate

active

07902048

ABSTRACT:
A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The phase change layer may be formed by CVD (e.g., MOCVD, cyclic-CVD) or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and/or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350° C., and the supply rate of the reaction gas may range from about 0-1 slm. Additionally, the above phase change layer may be provided in a via hole and bounded by top and bottom electrodes to form a storage node.

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M. Perego, et al “Fabrication of GeO2 layers using a divalent Ge precursor”, Applied Physics Letters, vol. 90, (Apr. 16, 2007), p. 162115(3 pages).
M. Perego et al “Fabrication of GeO2 layers using a divalent Ge precursor” Applied Physics Letters, vol. 90 (2007), pp. 162115-1-162115-3.

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