Method of forming a pattern with step features in a photopolymer

Details Method of forming a pattern with step features in a photopolymer Method of forming a pattern with step features in a photopolymer

1996-03-20

1997-05-20

Lesmes, George F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430327, 430330, 430349, 430394, 430945, G03C 500, G03C 516

Patent

active

056311206

ABSTRACT:
A stepped pattern is formed in a photoresist film (10) by heating the photoresist at a first temperature to soft bake it, and then heating only a selected portion (15) of the photoresist. That portion of the photoresist film is then heated at a temperature sufficient to partially degrade the photoresist. Another portion (22) of the photoresist film is then exposed to ultraviolet light to degrade it more fully than in the earlier step. The photoresist film is then developed under conditions sufficient to completely remove the portion exposed to ultraviolet light, and to partially remove the portion heated in the first step, thereby creating a stepped feature in the photoresist film.

REFERENCES:
patent: 3650796 (1972-03-01), Jackson et al.
patent: 4054483 (1977-10-01), Peiffer
patent: 4157407 (1979-06-01), Peiffer
patent: 4863827 (1989-09-01), Jain et al.
patent: 5012068 (1991-04-01), Anderson
patent: 5223288 (1993-06-01), Mendenhall et al.
patent: 5236812 (1993-08-01), Vassiliou et al.
patent: 5238787 (1993-08-01), Haluska et al.

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