Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1995-05-09
1996-08-13
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430324, 430327, 430330, G03F 726, G03C 516
Patent
active
055455123
ABSTRACT:
The invention provides an improved planarizing methodology for forming high-definition photolithographic masks of the type used in semiconductor integrated circuit manufacturing. A layer of planarizing photoresist is first applied to the surface topography of a semiconductor wafer substrate and shallow-penetrating radiation is then used to irradiate the surface of the photoresist. The radiation creates a blanket irradiated layer, adjacent the surface of the resist, consisting of an acid and resist in solution. The acid/resist solution readily absorbs and incorporates silicon. Next, the wafer is exposed to a silicon-containing compound, or softbaked in a silicon-containing environment, creating a silicon-enriched region adjacent the surface of the photoresist. An imaging resist is then applied to the resist, and a photolithographic mask is formed in the imaging resist. An etching step transfers the mask to the silicon-enriched region of the photoresist. The remaining areas of the silicon-enriched layer are exposed to an oxygen plasma which converts the silicon-enriched areas to silicon dioxide. The method of the invention produced high-definition mask lines and avoids the defect densities associated with conventional tri-layer processing using SOG.
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C. Pierrat, et al., Journal of Vacuum Science and Technology, "Positive resist image by dry etching: New dry developed positive working system for electron beam and deep ultraviolet lithography" pp. 1782-1786.
Duda Kathleen
Maliszewski Gerald W.
Ripma David C.
Sharp Kabushiki Kaisha
Sharp Microelectronics Technology Inc.
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