Method of forming a pattern in a semiconductor device and...

Details Method of forming a pattern in a semiconductor device and... Method of forming a pattern in a semiconductor device and...

2011-03-29

2011-03-29

Chea, Thorl (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S314000, C430S316000, C438S228000, C438S283000, C438S446000

Reexamination Certificate

active

07914973

ABSTRACT:
A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer is formed along a sidewall of the buffer pattern in the cell region, and a hard mask layer remains on the object layer in the peripheral region. The buffer layer is removed, and the spacer is separated along a second direction different from the first direction, thereby forming a cell hard mask pattern. A peripheral hard mask pattern is formed in the peripheral region. A minute pattern is formed using the cell and peripheral hard mask patterns in the substrate. Therefore, a line width variation or an edge line roughness due to the photolithography process is minimized.

REFERENCES:
patent: 6110837 (2000-08-01), Linliu et al.
patent: 6472265 (2002-10-01), Hsieh
patent: 6475891 (2002-11-01), Moon
patent: 6723607 (2004-04-01), Nam et al.
patent: 7115525 (2006-10-01), Abatchev et al.
patent: 7253118 (2007-08-01), Tran et al.
patent: 2006/0134868 (2006-06-01), Yoon et al.
patent: 7-307333 (1995-11-01), None
patent: 14-3326709 (2002-09-01), None
patent: 2002-280388 (2002-09-01), None
patent: 2002-289388 (2002-09-01), None

Affiliated with

Also associated with

Rating

Method of forming a pattern in a semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a pattern in a semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a pattern in a semiconductor device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2705960