Method of forming a pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430323, 430330, G03F 738

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058857540

ABSTRACT:
A method of forming a pattern includes the steps of forming a first layer by applying an organic material on a layer to be processed, forming a second layer which can be treated with an organic metal reagent and has a thickness in the range from 30 to 100 nm by applying a material which can be treated with an organic metal reagent on the first layer, selectively forming in the second layer a portion which cannot be treated with an organic metal reagent, treating with an organic metal reagent the portion of the second layer which can be treated with an organic metal reagent, and removing the portion which cannot be treated with an organic metal reagent and a portion of the first layer which is located thereunder.

REFERENCES:
patent: 4690838 (1987-09-01), Hiraoka
patent: 5356758 (1994-10-01), Orvek
patent: 5487967 (1996-01-01), Hutton
patent: 5550007 (1996-08-01), Taylor
David R. Wheeler, et al: "New Silicon-Rich Silylating Reagents for Dry-Developed Positive-Tone Deep-Ultraviolet Lithography ", J. Vac. Sci. Technol., B. 11(6), Nov./Dec. 1993 American Vacuum Society, pp. 2789-2793.
R.S. Hutton, et al: "Positive-Tone Silylated, Dry-Developed, Deep Ultraviolet Resist with 0.2 p, Resolution", J. Vac. Sci. Technol. B 12(6), Nov./Dec. 1994, 1994 American Vacuum Society, pp. 3919-3924.
Richard S. Hutton, et al: "Plasma Development of a Silylated Bilayer Resist: Effects of etch Chemistry on Critical Dimension Control and Feature Profiles", J. Vac. Sci. Technol. B 13(6), Nov./Dec. 1995, 1995 American Vacuum Society, pp. 2366-2371.
David Wheeler: "Aminodisilanes as Silylating Agents for Dry-Developed Positive-Tone Resists for Deep Ultraviolet (248nm) and Extreme Ultraviolet (13.5nm) Microlithography", SPIE, vol. 2438, pp .762-774.
Gary N. Taylor: "Extreme UV Resist Technology: The Limits of Silylated Resist Resolution", SPIE, vol. 2437, pp. 308-330.
F. Coopmans, et al: "Desire: A New Route to Submicron Optical Lithography", Solid State Technology, Jun. 1987, pp. 93-99.
Maaike Op de Beeck, et al: "Silylation of Novolac Based Resists: Influence of Deep-Ultraviolet Induced Crosslinking", J. Vac. Sci. Technol. B 10(2), Mar./Apr. 1992, 1992 American Vaccum Society, pp. 701-714.
James W. Thackeray, et al: "Effect of Resin Molecular Weight on the Resolution of DUV Negative Photoresists", SPIE, vol. 2195, pp. 152-163.
James Fahey, et al: "A New Positive Tone Deep-UV Photoresist base on Poly(4-hydroxystyrene) and an Acid Labile Protecting Group", SPIE, vol. 2438, pp. 125-142.

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