Method of forming a pattern

Details Method of forming a pattern Method of forming a pattern

1991-09-24

1994-05-31

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430 5, 430269, G03C 500

Patent

active

053168968

ABSTRACT:
A novel method of pattern formation and a projection exposure apparatus use the pupil of a projection lens of the projection exposure apparatus for forming an LSI pattern or the like, and mount at the pupil an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r)=cos (2.pi..beta.r.sup.2 -.theta./2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, the Fourier transform of a layout pattern drawn on the LSI is obtained, the obtained Fourier transform data are multiplied by cos (2.pi..beta.f.sup.2 -.theta./2) (where f is a spatial frequency, and .beta., .theta. appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 .mu. m by the use of an optical exposure system.

REFERENCES:
patent: 4902899 (1990-02-01), Lin et al.
patent: 5045417 (1991-09-01), Okamoto
IEEE Transactions on Electron Devices, vol. ED-29, pp. 1828-1836.
IEEE Electron Device Letters, EDL-8, pp. 179-180.
Progress in Optics, vol. 2, 1963, pp. 133-152.

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