Method of forming a non-volatile memory device with ramped tunne

Details Method of forming a non-volatile memory device with ramped tunne Method of forming a non-volatile memory device with ramped tunne

1996-12-17

1999-04-27

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438981, H01L 21336

Patent

active

058973540

ABSTRACT:
The invention relates to a method of forming a non-volatile memory device with a ramped tunnel dielectric layer, in which a floating gate material layer is being oxidized such that a tunnel dielectric layer is formed having a thickness at a drain region edge which is greater than a thickness at a source region edge.

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