Method of forming a non-volatile memory cell having a high coupl

Details Method of forming a non-volatile memory cell having a high coupl Method of forming a non-volatile memory cell having a high coupl

1998-07-30

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438259, 438300, H01L 21336

Patent

active

061597961

ABSTRACT:
In a non-volatile memory cell having a floating gate (EEPROM), it is necessary to achieve a large coupling capacitance between the floating gate and a control gate in which the gates take up as little space as possible. To that end, it is provided that a dielectric between the floating gate and the control gate runs, in portions, approximately perpendicularly to the surface of a semiconductor substrate, for example, with the control gate configured within a U-shaped or pot-shaped floating gate.

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