Method of forming a multiple inplant lightly doped drain (MILDD)

Details Method of forming a multiple inplant lightly doped drain (MILDD) Method of forming a multiple inplant lightly doped drain (MILDD)

1997-04-10

1999-02-02

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438305, 438163, 438289, 438306, H01L 21336

Patent

active

058664602

ABSTRACT:
A multiple implant lightly doped drain ("MILDD") field effect transistor is disclosed. The transistor includes a channel, a gate, a dielectric structure that separates the gate from the channel, a source region and a drain region. The drain region has a first drain subregion, a second drain subregion and a third drain subregion. Each drain subregion has a dopant concentration that differs from that of the other two drain subregions. A method of forming the same is also disclosed.

REFERENCES:
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patent: 5171700 (1992-12-01), Zamanian
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patent: 5573965 (1996-11-01), Chen et al.
patent: 5620919 (1997-04-01), Godinho et al.
patent: 5677224 (1997-10-01), Kadosh et al.
patent: 5705439 (1996-04-01), Chang

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