Method of forming a multiple implant lightly doped drain (MILDD)

Details Method of forming a multiple implant lightly doped drain (MILDD) Method of forming a multiple implant lightly doped drain (MILDD)

1998-10-14

1999-12-07

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438297, 438302, 438231, 257335, H01L 21265

Patent

active

059982748

ABSTRACT:
A multiple implant lightly doped drain ("MILDD") field effect transistor is disclosed. The transistor includes a channel, a gate, a dielectric structure that separates the gate from the channel, a source region and a drain region. The drain region has a first drain subregion, a second drain subregion and a third drain subregion. Each drain subregion has a dopant concentration that differs from that of the other two drain subregions. A method of forming the same is also disclosed.

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