Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-08
2008-07-08
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE29003, C257S344000, C438S519000, C438S522000, C438S527000, C438S530000
Reexamination Certificate
active
11278434
ABSTRACT:
A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.
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Ellis-Monaghan, J., Kam-Leung Lee, Meikei Ieong, Yang, I., “Carbon Implanted Halo for Super Halo characteristics NFETs in Bulk and SOI”, Sep. 11-13, 2001, Solid-State Device Research Conference, 2001. Proceeding of the 31st European.
Chen Chao-Chun
Chien Chin-Cheng
Chien Ming-Yen
Hsiao Tsai-Fu
Wang Hsiang-Ying
Estrada Michelle
Singal Ankush K
United Microelectronics Corp.
Winston Hsu
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