Method of forming a MOS transistor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE29003, C257S344000, C438S519000, C438S522000, C438S527000, C438S530000

Reexamination Certificate

active

07396717

ABSTRACT:
A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

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Ellis-Monaghan, J., Kam-Leung Lee, Meikei Ieong, Yang, I., “Carbon Implanted Halo for Super Halo characteristics NFETs in Bulk and SOI”, Sep. 11-13, 2001, Solid-State Device Research Conference, 2001. Proceeding of the 31st European.

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