Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-06-23
2010-02-16
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000, C438S486000, C257S066000, C257S070000
Reexamination Certificate
active
07662678
ABSTRACT:
Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.
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Cho Hans S.
Kim Suk-Pil
Lim Hyuck
Noguchi Takashi
Park Kyung-Bae
Harness & Dickey & Pierce P.L.C.
Picardat Kevin M
Samsung Electronics Co,. Ltd.
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