Method of forming a more highly-oriented silicon layer and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S166000, C438S486000, C257S066000, C257S070000

Reexamination Certificate

active

07662678

ABSTRACT:
Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

REFERENCES:
patent: 4976809 (1990-12-01), Broadbent
patent: 2005/0142707 (2005-06-01), Kim et al.
patent: 2007/0259487 (2007-11-01), Park et al.
patent: 2004051446 (2004-02-01), None
J. I. Eldridge et al., “Thermal Oxidation of Single-Crystal Aluminum at 550°C” Oxidation of Metals, vol. 30, Nos. 5/6 © 1988.
Makoto Ishida et al., “Double SOI Structures and Devices Applications with Heteroepitaxial A12O3and Si” Japanese Journal of Applied Physics vol. 34, pp. 831-835, Part 1, No. 2B, © 1995.

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