Method of forming a metallic oxide semiconductor

Details Method of forming a metallic oxide semiconductor Method of forming a metallic oxide semiconductor

1997-05-27

1998-07-28

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, 438305, 438691, H01L 21336

Patent

active

057862559

ABSTRACT:
A method of forming MOS components provides that after the formation of the gate and the doped source/drain regions, a polysilicon layer is deposited and planarized using a chemical-mechanical polishing method. The resulting unremoved polysilicon layer acts as source/drain terminals. Through these arrangements, the ion doped source/drain regions will have shallow junctions, yet their junction integrity will not be compromised by subsequent contact window etching and metallization processes. Furthermore, the front-end processes for forming the MOS component provide a good planar surface that offers great convenience for the performance of subsequent back-end processes.

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patent: 5162254 (1992-11-01), Usui et al.
patent: 5270234 (1993-12-01), Huang et al.
patent: 5422289 (1995-06-01), Pierce
patent: 5489543 (1996-02-01), Hong

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