Method of forming a metal wiring in a semiconductor device

Details Method of forming a metal wiring in a semiconductor device Method of forming a metal wiring in a semiconductor device

2006-06-27

2008-11-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S671000, C438S685000, C257SE21579

Reexamination Certificate

active

07452807

ABSTRACT:
Example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device. Other example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device without a generation of a bridge between adjacent metal wirings. In a method of forming a metal wiring in a semiconductor device, at least one metal layer and at least one barrier layer may be sequentially formed on a substrate. A metal blocking layer may be formed on the at least one barrier metal layer. A hard mask layer may be formed on the metal blocking layer. A hard mask pattern may be formed on the metal blocking layer by etching the hard mask layer without an exposure of the at least one barrier metal layer. A metal blocking layer pattern may be formed on the at least one barrier metal layer by etching the metal blocking layer using the hard mask pattern as an etching mask. The metal wiring having at least one metal layer pattern and at least one barrier metal layer pattern may be formed on the substrate by etching the at least one barrier metal layer and the at least one metal layer using the hard mask pattern as an etching mask. The metal wiring having a reduced width may be obtained without a failure (e.g., a bridge).

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