Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2005-08-02
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S681000, C438S648000, C438S656000, C438S685000
Reexamination Certificate
active
06924223
ABSTRACT:
A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
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Gomi Atsushi
Hatano Tatsuo
Kawano Yumiko
Leusink Gert J
Malhotra Sandra G.
International Business Machines - Corporation
Nguyen Thanh
Pillsbury Winthrop Shaw & Pittman LLP
Tokyo Electron Limited
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