Method of forming a metal gate electrode using replaced polysili

Details Method of forming a metal gate electrode using replaced polysili Method of forming a metal gate electrode using replaced polysili

1998-11-25

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, 438301, H01L 21336

Patent

active

061626945

ABSTRACT:
A metal gate electrode formed with high temperature activation of source/drain and LDD implants and a process for manufacture. A polysilicon alignment structure is formed on a silicon substrate. Source/drain regions are formed in alignment with the polysilicon alignment structure, and the alignment structure and the substrate are subjected to a first rapid thermal anneal. LDD implant regions are formed and the alignment structure and the substrate having the LDD regions are subjected to a second rapid thermal anneal. The polysilicon alignment structure is replaced with a metal gate electrode and gate dielectric.

REFERENCES:
patent: 4505028 (1985-03-01), Kobayashi
patent: 5006480 (1991-04-01), Chang et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5491099 (1996-02-01), Hsu
patent: 5780350 (1998-07-01), Kapoor
patent: 5789802 (1998-08-01), Tripsas
patent: 5856225 (1999-01-01), Lee et al.
patent: 5994179 (1999-11-01), Masuoka
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, pp. 57 and 384, Jan. 1986.
Wolf V. I as applied to claim 1 above, and further in view of Stanley Ph.D. in Silicon Processing for the VSLI Era, vol. 2: Process Integration, Lattice Press, pp. 238 and 239, Jan. 1990.

Affiliated with

Also associated with

Rating

Method of forming a metal gate electrode using replaced polysili does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a metal gate electrode using replaced polysili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal gate electrode using replaced polysili will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-270692