Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-11-01
2005-11-01
Fahmy, Wael (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S585000, C438S197000, C438S765000
Reexamination Certificate
active
06960515
ABSTRACT:
In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.
REFERENCES:
patent: 5132756 (1992-07-01), Matsuda
patent: 5342798 (1994-08-01), Huang
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5962904 (1999-10-01), Hu
patent: 6096640 (2000-08-01), Hu
patent: 6265297 (2001-07-01), Powell
patent: 6326248 (2001-12-01), Ohtani et al.
patent: 6348380 (2002-02-01), Weimer et al.
patent: 0636248 (1994-11-01), None
patent: 3242228 (2001-12-01), None
Cho Jun-Kyu
Cho Mahn-Ho
Choi Chul-Joon
Heo Seong-Jun
Ku Ja-Hum
Fahmy Wael
Mills & Onello LLP
Rao Shrinivas H.
Samsung Electronics Co,. Ltd.
LandOfFree
Method of forming a metal gate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a metal gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal gate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3467614