Method of forming a mask structure and method of forming a...

Details Method of forming a mask structure and method of forming a... Method of forming a mask structure and method of forming a...

2006-10-30

2008-11-18

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S736000, C438S737000, C438S738000, C438S743000, C438S744000, C257SE21014, C257SE21035, C257SE21038, C257SE21633, C257SE21639

Reexamination Certificate

active

07452825

ABSTRACT:
In the method of forming a mask structure, a first mask is formed on a substrate where the first mask includes a first mask pattern having a plurality of mask pattern portions having openings therebetween and a second mask pattern having a corner portion of which an inner side wall that is curved. A sacrificial layer is formed on the first mask. A hard mask layer is formed on the sacrificial layer. After the hard mask layer is partially removed until the sacrificial layer adjacent to the corner portion is exposed, a second mask is formed from the hard mask layer remaining in the space after removing the sacrificial layer. A minute pattern having a fine structure may be easily formed on the substrate.

REFERENCES:
patent: 5581110 (1996-12-01), Razouk et al.
patent: 5939335 (1999-08-01), Arndt et al.
patent: 6184151 (2001-02-01), Adair et al.
patent: 6208008 (2001-03-01), Arndt et al.
patent: 6423618 (2002-07-01), Lin et al.
patent: 6584609 (2003-06-01), Pierrat et al.
patent: 6884733 (2005-04-01), Dakshina-Murthy et al.
patent: 7230287 (2007-06-01), Anderson et al.
patent: 11-274158 (1999-10-01), None
patent: 2004-004904 (2004-01-01), None
patent: 2004-093705 (2004-03-01), None

Affiliated with

Also associated with

Rating

Method of forming a mask structure and method of forming a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a mask structure and method of forming a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a mask structure and method of forming a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4030746