Method of forming a layer on a semiconductor substrate

Details Method of forming a layer on a semiconductor substrate Method of forming a layer on a semiconductor substrate

2011-03-08

2011-03-08

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S287000, C438S591000, C438S680000, C438S785000

Reexamination Certificate

active

07902090

ABSTRACT:
In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.

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