Method of forming a highly transparent silicon rich nitride prot

Details Method of forming a highly transparent silicon rich nitride prot Method of forming a highly transparent silicon rich nitride prot

1994-10-24

1996-11-26

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437922, 148DIG55, H01L 2700, H01L 2170

Patent

active

055785174

ABSTRACT:
An integrated circuit includes a conductive fusible link that may be blown by heating with laser irradiation. The integrate circuit comprises: a silicon substrate; a first insulating layer; a fusible link on the first layer; a second insulating layer overlying the first layer and the fusible link; an opening through the second layer exposing the fuse; and a protective layer over the surfaces of the opening. A laser beam is irradiated through the opening and the protective layer to melt the fusible link. The protective layer is highly transparent to a laser beam and does not interfere with the laser melting (trimming) operation. Moreover, the protective layer prevents contaminates from diffusing in through the opening to harm adjacent semiconductor devices.

REFERENCES:
patent: 4536949 (1985-08-01), Takayama et al.
patent: 5025300 (1991-06-01), Billig et al.
patent: 5093174 (1992-03-01), Suzuki et al.
patent: 5241212 (1993-08-01), Motonami et al.

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