Method of forming a high load resistance type static random acce

Details Method of forming a high load resistance type static random acce Method of forming a high load resistance type static random acce

1997-05-12

1999-11-09

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438384, H01L 218234, H01L 218244, H01L 2120

Patent

active

059813288

ABSTRACT:
The present invention is related to a high load resistance (HLR) type static random access memory (SRAM) which is small enough to have a profit in device integration. The present invention also provides an SRAM cell, which is easy to convert the thin film transistor (TFT) type SRAM cell into the HLR type SRAM as occasion calls. A high load resistance type static random access memory cell according to the present invention has four polysilicon layers and two metal lines, this is similar to a conventional TFT type SRAM cell. One layer of the four polysilicon layers is used for a high load resistance element and a power line according to the amount of the impurity implanted in the polysilicon layer.

REFERENCES:
patent: 5012443 (1991-04-01), Ema
patent: 5034797 (1991-07-01), Yamanaka et al.
patent: 5093706 (1992-03-01), Mitsuhashi et al.
patent: 5668380 (1997-09-01), Wuu et al.
patent: 5805497 (1998-09-01), Uchida
patent: 5844838 (1998-12-01), Roberts

Affiliated with

Also associated with

Rating

Method of forming a high load resistance type static random acce does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a high load resistance type static random acce, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a high load resistance type static random acce will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1454991