Method of forming a gate oxide film for a high voltage...

Details Method of forming a gate oxide film for a high voltage... Method of forming a gate oxide film for a high voltage...

2007-06-26

2007-06-26

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S257000, C438S258000, C257SE21278, C257SE21679

Reexamination Certificate

active

11167961

ABSTRACT:
A method of forming a gate oxide film for high voltage region of semiconductor devices includes forming patterns on a semiconductor substrate having a high voltage region, thereby exposing only a gate oxide film formation region for high voltage, forming a metal oxidization layer on the entire surface, and performing a process of removing the patterns, thereby forming the metal oxidization layer only in the gate oxide film formation region for high voltage.

REFERENCES:
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4448800 (1984-05-01), Ehara et al.
patent: 2005/0287729 (2005-12-01), Steimle
patent: 0025449 (1988-03-01), None
Official action issued in corresponding Korean application No. 2005-39443 dated Jun. 29, 2006.

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