Method of forming a gate of a semiconductor device

Details Method of forming a gate of a semiconductor device Method of forming a gate of a semiconductor device

2008-05-13

2008-05-13

Rose, Kiesha (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S596000, C438S275000

Reexamination Certificate

active

07371669

ABSTRACT:
In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.

REFERENCES:
patent: 6133096 (2000-10-01), Su et al.
patent: 6784038 (2004-08-01), Tanabe et al.
patent: 6861356 (2005-03-01), Matsuse et al.
patent: 6992010 (2006-01-01), Chou et al.
patent: 7211497 (2007-05-01), Hiraiwa et al.
patent: 10-2001-0039009 (2001-05-01), None
patent: 10-2003-0080239 (2003-10-01), None

Affiliated with

Also associated with

Rating

Method of forming a gate of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a gate of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a gate of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761135