Method of forming a gate of a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C438S592000, C438S596000, C438S275000

Reexamination Certificate

active

07371669

ABSTRACT:
In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.

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patent: 6861356 (2005-03-01), Matsuse et al.
patent: 6992010 (2006-01-01), Chou et al.
patent: 7211497 (2007-05-01), Hiraiwa et al.
patent: 10-2001-0039009 (2001-05-01), None
patent: 10-2003-0080239 (2003-10-01), None

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